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Watanabe, ”A dynamic optically reconfigurable gate array – perfect emulation,” IEEE Journal of Quantum Electronics, Vol. 44, Issue 5, pp. 493-500, 2008. [9] D. Seto, M. Watanabe, ”An 11,424 Gate-Count Dynamic Optically Reconfigurable Gate Array with a Photodiode Memory Architecture,” Asia and South Pacific Design Automation Conference, pp. 117-118, 2009. 4 Evolutionary Memory: Unified Random Access Memory (URAM) Yang-Kyu Choi and Jin-Woo Han Korea Advanced Institute of Science and Technology (KAIST) Republic of Korea 1.

Memory devices have consequently been advanced by pursuing just one of these virtues, and appear in many different forms. SRAM dominates high speed on-chip caches for advanced logic and DRAM occupies applications for high-density and high-speed computation; but DRAM’s data is volatile, and Flash memory is widely used for high density and non-volatile data storage. Therefore, if a single memory transistor can process different memory functions, a paradigm shift from ‘scaling’ to ‘multifunction’ can continue the evolution of silicon technology.

117-118, 2009. 4 Evolutionary Memory: Unified Random Access Memory (URAM) Yang-Kyu Choi and Jin-Woo Han Korea Advanced Institute of Science and Technology (KAIST) Republic of Korea 1. Introduction Over the course of the past three decades, we have witnessed dramatic changes in our lifestyles. This is attributed to an unprecedented revolution of information technology (IT). The key element of the IT revolution is the continuing advancement of semiconductor technology. A major driving force of semiconductor technology lies in silicon.

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